Revista Eletrônica de Potência (Brazilian Journal of Power Electronics)

Palavras Chaves: Acionamentos elétricos, Modelo comportamental, Módulo semicondutor híbrido, SiC MOSFET

Resumo
Módulos semicondutores híbridos consistem em dispositivos que combinam interruptores de silício com interruptores de algum material semicondutor de larga banda proibida (do inglês, wide band gap (WBG)), proporcionando a obtenção de soluções com um melhor custo benefício. Esta abordagem permite estender os limites da tecnologia baseada em silício, proporcionando um custo mais competitivo do que os módulos baseados exclusivamente em materiais WBG. Este artigo propõe uma metodologia de seleção de interruptores para compor um par híbrido formado por um Si-IGBT e um SiC-MOSFET, os quais são utilizados para acionar um motor de indução de 440 V e 300 HP. Dentre as combinações analisadas, foram escolhidas duas soluções híbridas com potencial de redução de perdas, as quais são comparadas com as soluções Si e SiC de mesma corrente disponíveis no mercado. As comparações são feitas a partir de um perfil de operação diário real de acionamento elétrico de um exaustor. Os resultados demonstraram uma potencial redução de perdas energéticas diárias de 45% em relação aos módulos originais de silício, além de apresentar um custo inicial intermediário entre as soluções baseadas em Si-IGBT e SiC-MOSFET.

Title: EVALUATION OF HYBRID SEMICONDUCTOR MODULES FOR ELECTRIC DRIVES

Keywords: Behavior Model, electrical drives, Hybrid semiconductor module, SiC MOSFET

Abstract
Hybrid semiconductor modules combines silicon switches with wide-bandgap transistors (WBG), conceiving solutions with better cost benefits. This approach also extends the limits of silicon-based technology, providing a more competitive cost than modules based exclusively on WBG materials. This article proposes a device selection methodology to compose a hybrid pair formed by a Si-IGBT and a SiC-MOSFET, which are used to drive a 440 V and 300 HP induction motor. Among the considered combinations, two hybrid solutions with potential for loss reduction were chosen, which are compared with the Si and SiC solutions of the same current available on the market. The comparisons are made from a daily mission profile of an industrial fan. The results points a potential energy loss reduction around 45% in relation to the original silicon modules, in addition to presenting an initial intermediate cost between the solutions based on Si-IGBT and SiC-MOSFET.

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