Institucional Revista Notícias Contato Acesso Associado

Revista Eletrônica de Potência (Brazilian Journal of Power Electronics)

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Issue: Volume 13 - Número 2
Publishing Date: maio 2008
Editor-in-Chief: Fernando Luiz Marcelo Antunes
Editor Affiliation: UFC
Some Design Considerations For The 6.5 KV Igbt-based Half-bridge Dc/dc Converter
Dmitri Vinnikov
55 - 60
http://dx.doi.org/10.18618/REP.2008.2.055060
English Data

Keywords: DC-DC converter, design, efficiency, highfrequency transformer, power converter

Abstract

The 6.5 kV insulated gate bipolar transistor (IGBT) is a new promising power device for high-voltage high-power applications. Due to its increased voltage blocking capability, the new HV IGBT can serve as a good replacement for GTO and IGCT thyristors in medium or medium-to-high power applications. One of its general application fields is railway traction. The paper discusses design and development considerations of the 50-kW auxiliary power supply (APS) to be used in 3.0 kV DC commuter trains. Focus is on the implementation of 6.5 kV IGBTs in the primary inverter of APS to improve power density, integrity and reliability of the whole system. For instance, analysis and simulation of main functional blocks of a converter for different operation points are described. General design considerations mainly concerning the inverter stage, power transformer and output rectifier are specified in the paper. Some design optimization possibilities are proposed.

References

[1] D. Vinnikov, “Research, Design and Implementation of Auxiliary Power Supplies for the Light Rail Vehicles”, Ph.D. Dissertation, Dept. El. Drives Pow. Elec., Tallinn Univ. Tech., Estonia, 2005. [2] EN 50163:1995 Railway applications – Supply voltages of traction systems, CLC/TC 9X, 1996-02-19. [3] S. Bernet, “Recent Developments of High Power Converters for Industry and Traction Applications”, IEEE Transactions on Power Electronics, vol. 15, no. 6, pp. 1102–1117, November 2000. [4] S. Dieckerhoff, S. Bernet, D. Krug, “Evaluation of IGBT Multilevel Converters for Transformerless Traction Applications”, in Proc. of 34th IEEE Annual Power Electronics Specialist Conference PESC ’03, vol. 4, pp. 1757-1763, 2003. [5] IPOSIM Simulation Tool for IGBT Modules, Infineon High Power Semiconductor (Eupec), 2007. [6] J. Brown, R. Davies, D. Williams, J. Bernacchi, “High- Efficiency Half-Bridge DC-to-DC Converters with Secondary Synchronous Rectification,” PCIM 2001, Nuremberg, Germany. [7] Y. N. Starodubtsev, V. I. Keilin, V. Y. Belozerov, “Cores of Fast-Quenched GAMMAMET alloys with a linear magnetization curve”, Russian Electrical Engineering, ISSN1068-3712, ETATS-UNIS, 1993. [8] Magnetic Properties of Tape Wound Encapsulated Cores GAMMAMET®14DC, GAMMAMET Research & Production Enterprise, 2006. [9] A. I. Pressman, Switching Power Supply Design. Second Edition, McGraw-Hill, 1998. [10] K. H. Billings, Switchmode Power Supply Handbook. McGraw-Hill, 1989. [11] High Temperature Performance of Diodes, Applications Department, APD Semiconductor, San Jose CA, rev. 1, 2004. [12] U. Schwarzer, R.W. De Doncker, “Characterization of 6.5 kV IGBT Modules for Hard- and Soft-Switching Operation in Medium Voltage Applications”, in Proc. of 20th Annual IEEE Applied Power Electronics Conference and Exposition APEC 2005, vol. 1, pp. 329- 335, 2005.

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